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| M22100 4 X 4 CROSSPOINT SWITCH WITH CONTROL MEMORY .LOWONRESI ." .LARGEANALOGSI .TRANSMI .MATCHEDSWI .HI .STANDARDCOS/ .100%TESTEDFORQUI STANCE - 75 TYP. AT VDD = 12 V BUILT-IN" CONTROL LATCHES GNAL CAPABILITY VDD/2 TS SIGNALS UP TO 10 MHz TCH CHARACTERISTICS RON = 18 TYP. AT VDD - VSS = 12 V. GH LINEARITY : - 0.5 % DISTORTION (typ.) AT f = 1 KHz, VIN = 5 V PEAK TO PEAK, VDD VSS = 10 V, RL = 10 K MOS NOISE IMMUNITY ESCENT CURRENT Therefore, all switches must be turned off by putting the strobe high and data-in-low, and then addressing all switches in succession. EY (Plastic Package) F (Ceramic Package) ORDER CODES : M22100 B1 M22100 F1 DESCRIPTION The M22100 combines a 4 x 4 array of crosspoints (transmission gates) with a 4-line-to-16-line decoder and 16 latch circuits. Any one of the sixteen transmission gates (crosspoints) can be selected by applying the appropriate four line address. The selected transmission gate can be turned on or off by applying a logical one or zero, respectively, to the data input and strobing the strobe input to a logical one. Any number of the transmission gates can be ON simultaneously. When the required operating power is applied to the 22100, the states of the 16 switches are indeterminate. PIN CONNECTIONS FUNCTIONAL DIAGRAM TRUTH TABLE Address A 0 1 0 1 0 1 0 1 B 0 0 1 1 0 0 1 1 C 0 0 0 0 1 1 1 1 D 0 0 0 0 0 0 0 0 X1 Y1 X2 Y1 X3 Y1 X4 Y1 X1 Y2 X2 Y2 X3 Y2 X4 Y2 Select A 0 1 0 1 0 1 0 1 Address B 0 0 1 1 0 0 1 1 C 0 0 0 0 1 1 1 1 D 1 1 1 1 1 1 1 1 X1 Y3 X2 Y3 X3 Y3 X4 Y3 X1 Y4 X2 Y4 X3 Y4 X4 Y4 Select September 1988 1/13 M22100 ABSOLUTE MAXIMUM RATING Symbol VDD * Vi II Ptot Parameter Supply Voltage: Ceramic Types Plastic Types Input Voltage DC Input Current (any one input) Total Power Dissipation (per package) Dissipation per Output Transistor for Top = Full Package Temperature Range Operating Temperature: Ceramic Types Plastic Types Storage Temperature Value -0.5 to +20 -0.5 to +18 -0.5 to VDD + 0.5 10 200 100 -55 to +125 -40 to +85 -65 to +150 Unit V V V mA mW mW o o o Top Tstg C C C Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress ratingonly and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability. * All voltage values are referred to VSS pin voltage. RECOMMENDED OPERATING CONDITIONS Symbol VDD VI Top Parameter Supply Voltage: Ceramic Types Plastic Types Input Voltage Operating Temperature: Ceramic Types Plastic Types Value 3 to 18 3 to 15 0 to VDD -55 to +125 -40 to +85 Unit V V V o o C C LOGIC DIAGRAM 2/13 M22100 STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions) Test Conditios Symbol Parameter VI (V) VDD (V) 5 10 15 20 5 B1 RON On Resistance 10 15 5 F1 Any Switch 10 12 15 B1 VIS = 0 to VDD 5 10 12 ON Resistance RON (Between any two channels) 15 5 10 12 15 All Switch OFF 0/18 0/15 18 15 0.1 0.3 450 135 100 70 1000 145 110 75 TLOW * Min. Max. Value 25 oC Min. Typ. Max. 0.04 0.04 0.04 0.08 0.04 0.04 0.04 225 85 75 65 225 85 75 65 35 20 18 15 10-3 0.1* 10 -3 THIGH * Min. Max. 150 300 600 3000 150 300 600 1625 230 175 125 1440 205 155 110 Unit CROSSPOINT IL Quiescent Supply Current F1 5 10 20 100 20 40 80 1250 180 135 95 1250 180 135 95 A OFF Channel Leakage Current CONTROL V IL Input Low Voltage VIH Input High Voltage Input Current F1 B1 1 1 A 0.3 OFF Switch IL < 0.2 A ON Switch see RON Characteristics F1 B1 Any Control Input Any Input 0/18 0/15 5 10 15 5 10 15 18 15 3.5 7 11 1.5 3 4 3.5 7 11 0.1 0.3 1.5 3 4 3.5 7 11 10-5 0.1* 10 5 -5 1.5 3 4 V 1 1 V II CI 0.3 7.5 A pF Input Capacitance * Determined by minimum feasible leakage measurement for automatic testing * TLOW = -55 oC for HCC device: -40 oC for HCF device. * THIGH = +125 oC for HCC device: +85 oC for HCF device. The Noise Margin for both "1" and "0" level is: 1V min. with VDD = 5 V, 2 V min. with VDD = 10 V, 2.5 V min. with VDD = 15 V 3/13 M22100 DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25 o C, C L = 50 pF, all input rise and fall times= 20 ns) Symbol Parameter Test Conditions fi RL VIS * (KHz) (KW) (V) 5 10 15 1 1 5 Sine Wave Input VOS = - 3 dB 20 Log VIS 10 1 1.6 1 5 1 5 Sine Wave Input 1 10 Sine Wave Input 1 10 10 0.1 KHz Value VDD (V) 5 10 15 10 Min. Typ. Max. Unit CROSSPOINT Propagation Delay Time tPHL tPLH Address or Strobe Inputs to Output Frequency Response (Any Switch ON) 30 15 10 40 60 30 20 ns MHz Sine Wave Distortion Feedthrough (All Switches OFF) Frequency for Signal Crosstalk Attenuation of 40 dB Frequency for Signal Crosstalk Attenuation of 110 dB Capacitance Xn to Ground Yn to Ground Feedthrough CONTROLS tPHZ Propagation Delay Time Strobe to Output (Switch Turn-ON to High Level) tPZH Propagation Delay Time Data-In to Output (Switch Turn-ON to High Level) Propagation Delay Time Address to Output (Switch RL = 1 K Turn-ON to High Level) CL = 50 pF Propagation Delay Time tr, tf = 20 ns Strobe to Output (Switch Turn-OFF) Propagation Delay Time Data-In to Output (Switch Turn-ON to Low Level) Propagation Delay Time Address to Output (Switch Turn-OFF) Setup Time Data-In to Strobe, Address C 10 10 10 0.5 80 1.5 % dB MHz Sine Wave Input 18 30 0.4 500 230 145 500 220 135 480 225 150 450 200 165 500 220 135 425 190 145 200 80 50 1000 460 290 1000 440 270 960 450 300 900 400 330 1000 440 270 850 380 290 400 160 100 5-15 pF See Figure 1 See Figure 2 tPZH See Figure 3 tPHZ See Figure 1 tPZL See Figure 2 tPHZ See Figure 3 tsetup 5 10 15 5 10 15 5 10 15 5 10 15 5 10 15 5 10 15 5 10 15 ns ns ns ns ns ns ns * Peak to peak voltage symmetrical about VDD/2 4/13 M22100 DYNAMIC ELECTRICAL CHARACTERISTICS (continued) Symbol Parameter Test Conditions RL VIS * fi (KHz) (KW) (V) Value VDD (V) 5 10 15 5 10 15 5 10 15 10 10 10 Min. Typ. Max. Unit CONTROLS (continued) Hold Time Data-In to thold Strobe, Address f Switching Frequency RL = 1 K CL = 50 pF tr, tf = 20 ns 0.6 1.6 2.5 tW Strobe Pulse Width 180 110 35 1.2 3.2 5 300 120 90 75 ns MHz 600 240 180 ns Control Crosstalk Data-In, Address, or Storbe to Output * Peak to peak volatge symmetrical about VDD/2 mV (peak) Typical ON Resistance vs. Input Signal Voltage at VDD = - VSS = 2.5 V. Typical ON Resistance vs. Input Signal Voltage at VDD = - VSS = 5 V. 5/13 M22100 Typical ON Resistance vs. Input Signal Voltage at VDD = - VSS = 7.5 V. Typical ON Resistance vs.. Input Signal Voltage at Tamb = 25 C. Typical Swich ON Transfert Characteristics (1 of 16 switches). Typical Swich ON Frequency Response Characteristics. Typical Crosstalk Between switches vs. Signal Frequency. Typical Dynamic Power Dissipation vs. Switching Frequency.. 6/13 M22100 TEST CIRCUITS Quiescent Current. Input Current. Off Switch Input or Output Leakage Current. Dynamic Power Dissipation. Croostalk Between Switch Circuits in the Same Package. 7/13 M22100 Propagation Delay Time and Waveforms (signal input to signal output, switch ON). Waveforms for Crosstalk (control input to signal output). Figure 1 : Propagation Delay Time and Waveforms (strobe to signal output, switch Turn-ON or TurnOFF). 8/13 M22100 Figure 2 : Propagation Delay Time and Waveforms (data-in to signal output, switch Turn-ON to high or low level). Figure 3 : Propagation Delay Time and Waveforms (address to signal output switch Turn-ON or TurnOFF). 9/13 M22100 Plastic DIP16 (0.25) MECHANICAL DATA mm MIN. a1 B b b1 D E e e3 F I L Z 3.3 1.27 8.5 2.54 17.78 7.1 5.1 0.130 0.050 0.51 0.77 0.5 0.25 20 0.335 0.100 0.700 0.280 0.201 1.65 TYP. MAX. MIN. 0.020 0.030 0.020 0.010 0.787 0.065 inch TYP. MAX. DIM. P001C 10/13 M22100 Ceramic DIP16/1 MECHANICAL DATA mm MIN. A B D E e3 F G H L M N P Q 7.8 2.29 0.4 1.17 0.22 0.51 0.38 17.78 2.79 0.55 1.52 0.31 1.27 10.3 8.05 5.08 0.307 0.090 0.016 0.046 0.009 0.020 3.3 0.015 0.700 0.110 0.022 0.060 0.012 0.050 0.406 0.317 0.200 TYP. MAX. 20 7 0.130 MIN. inch TYP. MAX. 0.787 0.276 DIM. P053D 11/13 M22100 PLCC20 MECHANICAL DATA mm MIN. A B D d1 d2 E e e3 F G M M1 1.27 1.14 7.37 1.27 5.08 0.38 0.101 0.050 0.045 9.78 8.89 4.2 2.54 0.56 8.38 0.290 0.050 0.200 0.015 0.004 TYP. MAX. 10.03 9.04 4.57 MIN. 0.385 0.350 0.165 0.100 0.022 0.330 inch TYP. MAX. 0.395 0.356 0.180 DIM. P027A 12/13 M22100 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 13/13 |
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